发明名称 |
Group III nitride compound semiconductor light-emitting element |
摘要 |
A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).
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申请公布号 |
US2003222259(A1) |
申请公布日期 |
2003.12.04 |
申请号 |
US20030448025 |
申请日期 |
2003.05.30 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
SENDA MASANOBU;UEMURA TOSHIYA;OMOYA HIDEKI;HASHIMURA MASAKI |
分类号 |
H01L33/10;H01L33/22;H01L33/32;H01L33/42;H01L33/54;H01L33/56;H01L33/60;H01L33/62;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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