发明名称 |
Method and its apparatus for measuring size and shape of fine patterns |
摘要 |
In size measurement of a semiconductor device, profiles of a pattern formed in a resist process are determined through an exposure/development simulation in respect of individual different combinations of exposure values and focus values to form a profile matrix and scattered light intensity distributions corresponding to the individual profiles are determined through calculation to form a scattered light library, thereby forming a profile library consisting of the profile matrix and scattered light library. A scattered light intensity distribution of an actually measured pattern is compared with the scattered light intensity distributions of the scattered light library and a profile of profile matrix corresponding to a scattered light intensity distribution of scattered light library having the highest coincidence is determined as a three-dimensional shape of the actually measured pattern.
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申请公布号 |
US2003223087(A1) |
申请公布日期 |
2003.12.04 |
申请号 |
US20030372270 |
申请日期 |
2003.02.25 |
申请人 |
SASAZAWA HIDEAKI;NAKATA TOHISHIKO;WATANABE MASAHIRO;MATSUMOTO SHUNICHI |
发明人 |
SASAZAWA HIDEAKI;NAKATA TOHISHIKO;WATANABE MASAHIRO;MATSUMOTO SHUNICHI |
分类号 |
G01B11/02;G01B11/24;H01L21/027;H01L21/66;(IPC1-7):G01B11/04;G01B11/08 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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