| 摘要 |
A heavily doped semiconductor layer (280) is formed over the barrel of a vertical cavity surface emitting laser (VCSEL) (200), providing current conduction and current spreading across and into the aperture of a laser barrel, while eliminating the need for a light-obstructing conductive electrical contact overhang. The VCSEL (200) comprises a substrate (220), a first distributed Bragg reflector (DBR) (230), an active region (240), a second DBR (250) having a non-conductive ion implantation region (255) and a laser barrel region with a first diameter (260), the heavily doped semiconductor layer (280), and a conductive electrical contact (215). The conductive electrical contact defines an opening with a second diameter (265) that is greater than the first diameter (260). |
