| 摘要 |
A semiconductor integrated circuit device includes a plurality of capacitor elements, which are separated from each other by a first insulating film on a plane. Each of the plurality of capacitor elements has a lower electrode, a dielectric film, and an upper electrode, and the lower electrode has a crown structure. At least one of the lower electrode and the upper electrode has a laminate structure composed of a plurality of conductive films. An outermost film of the laminate structure on a side of the dielectric film is a ruthenium film, and a portion of the laminate structure other than the outermost film has higher selective growth than the first insulating film with respect to the ruthenium film. Here, the first insulating film is desirably a tantalum oxide film.
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