发明名称 |
Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory cell |
摘要 |
A process for manufacturing a non-volatile memory cell having at least one gate region, the process including the steps of depositing a first dielectric layer onto a semiconductor substrate; depositing a first semiconductor layer onto the first dielectric layer to form a floating gate region of the memory cell; and defining the floating gate region of the memory cell in the first semiconductor layer. The process further includes the step of depositing a second dielectric layer onto the first conductive layer, the second dielectric layer having a higher dielectric constant than 10. Also disclosed is a memory cell integrated in a semiconductor substrate and having a gate region that has a dielectric layer formed over a first conductive layer and having a dielectric constant higher than 10.
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申请公布号 |
US2003224563(A1) |
申请公布日期 |
2003.12.04 |
申请号 |
US20020323615 |
申请日期 |
2002.12.18 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ALESSANDRI MAURO;CRIVELLI BARBARA;ZONCA ROMINA |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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