Semiconductor device and method of manufacturing semiconductor device

摘要

A semiconductor device includes a first-first conductivity type semiconductor layer which includes a cell region portion and a junction terminating region portion, the junction terminating region portion being a region portion which is positioned in an outer periphery of the cell region portion to maintain a breakdown voltage by extending a depletion layer to attenuate an electric field; a second first conductivity type semiconductor layer which is formed on one surface of the first-first conductivity type semiconductor layer; a first main electrode which is electrically connected to the second-first conductivity type semiconductor layer; first-second conductivity type semiconductor layers which are formed in the cell region portion of the first-first conductivity type semiconductor layer in substantially vertical directions to the one surface of the first-first conductivity type semiconductor layer, respectively, and which are periodically disposed in a first direction which is an arbitrary direction parallel to the one surface; a second-second conductivity type semiconductor layer which is selectively formed in the other surface portion of the first-first conductivity type semiconductor layer so as to contact the first-second conductivity type semiconductor layers; a third-first conductivity type semiconductor layer which is selectively formed in the surface portion of the second-second conductivity type semiconductor layer; a second main electrode which is formed so as to contact the second-second conductivity type semiconductor layer and the third first conductivity type semiconductor layer; a control electrode which is formed on the surface of the first-first conductivity type semiconductor layer sandwiched by the adjacent second-second conductivity type semiconductor layers, the surface of the adjacent second-second conductivity type semiconductor layers and the surface of the third-first conductivity type semiconductor layer, with a gate insulating film interposed therebetween; and third-second conductivity type semiconductor layers which are formed in the junction terminating region portion and are periodically disposed in at least one direction of the first direction and a second direction perpendicular to the first direction.