| 发明名称 |
Ferroelectric thin film processing for ferroelectric field-effect transistor |
| 摘要 |
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.
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| 申请公布号 |
US2003224537(A1) |
申请公布日期 |
2003.12.04 |
| 申请号 |
US20020273200 |
申请日期 |
2002.10.17 |
| 申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHEN SAN-YUAN;SUN CHIA-LIANG;CHIN ALBERT |
| 分类号 |
C23C18/12;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/00;H01L21/20 |
主分类号 |
C23C18/12 |
| 代理机构 |
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