| 摘要 |
Impurity of a conductivity type for formation of an intrinsic base diffusion layer and impurity of the opposite conductivity type are implanted into a semiconductor substrate. An exposed surface of the semiconductor substrate is irradiated with plasma, so that many crystal defects are produced therein. Next, a polysilicon film is formed under the condition causing the grain size to increase. In a portion of the polysilicon film located near the exposed surface of the semiconductor substrate, the grain size becomes relatively small influenced by the crystal defects in the substrate surface. In a portion of the polysilicon film located on the silicon oxide film, the grain size becomes relatively large uninfluenced by the crystal defects. Thus, degradation of electric characteristics is suppressed, and variation in resistance value of the resistance element is alleviated.
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