| 发明名称 |
Methods for polymer removal following etch-stop layer etch |
| 摘要 |
Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.
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| 申请公布号 |
US2003224595(A1) |
申请公布日期 |
2003.12.04 |
| 申请号 |
US20020161502 |
申请日期 |
2002.05.31 |
| 申请人 |
SMITH PATRICIA BEAUREGARD;PARK HEUNGSOO |
发明人 |
SMITH PATRICIA BEAUREGARD;PARK HEUNGSOO |
| 分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/476;H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
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