| 摘要 |
An improved process for forming a contact on a top electrode of a capacitor is described. The process includes forming an encapsulation layer on at least the top electrode of the capacitor. When the contact hole is etched, the encapsulation layer is not removed. After the contact hole is formed, the resist mask is removed. Since the encapsulation layer remains on the top electrode, the capacitor is protected from hydrogen resulting from the decomposition of the resist material.
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