LASER MODULE

摘要

A laser module in which the integrated value (hereinafter referred to as high-frequency RIN) of the relative intensity noise (RIN) over a high-frequency band from 10 MHz to 1 GHz is -40 dB or more. A semiconductor laser device comprising such a laser module and an active layer of quantum well structure satisfies the relation Gamma/d<=1.3X10<-3> nm<-1> where Gamma is the light confinement factor per well layer and d (nm) is the thickness of one well layer. The active layer structure of the laser module can be a decoupled confinement heterostructure (DHC structure) or a separated confinement heterostructure (SCH structure).