Tungsten plug with conductor capping layer

摘要

Within a method for forming a microelectronic fabrication there is provided a substrate having formed thereover a patterned dielectric layer which defines a via. There is also formed within a lower portion of the via a tungsten.stud layer having a recess thereabove within the via. There is also formed within the recess a patterned conductor capping layer formed of a conductor material other than tungsten. The patterned conductor capping layer may seal a void formed within the tungsten stud layer.