| 摘要 |
In some embodiments, non-volatile memory (NVM) devices are formed on a silicon-on-insulator (SOI) substrate (12) by forming elevated sources and drains (56) in contact with extensions (46) within the top silicon layer (18) of the SOI substrate (12). Buried conductive regions (42) are formed within the top silicon layer (18) below the extensions (46) to mitigate floating body effects that occur when using SOI substrates. In other embodiments, NVM devices are formed using elevated sources and drains (56), extensions (46) and the buried conductive regions (42) in bulk semiconductor substrates. In any embodiment, logic devices may be formed in conjunction with NVM devices, wherein the logic and NVM devices have elevated sources and drains (56), extensions (46) and the buried conductive regions (42). |
