发明名称 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL
摘要 A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
申请公布号 WO03100818(A1) 申请公布日期 2003.12.04
申请号 WO2003US16559 申请日期 2003.05.22
申请人 APPLIED MATERIALS, INC. 发明人 HOFFMAN, DANIEL, J.;MILLER, MATTHEW, L.;YANG, JANG, GYOO;CHAE, HEEYOEP;BARNES, MICHAEL;ISHIKAWA, TETSUYA;YE, YAN
分类号 H05H1/46;H01J27/16;H01J37/08;H01J37/32;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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