| 摘要 |
<p>In an optical sensor unit (10) composed of pixels (A) of an array of n lines and m columns, supply lines (13a, 13b) electrically connected to transfer electrodes (12a to 12d) made of polycrystalline silicon and adapted for applying transfer voltages are so provided as to cover a part of the surface of a light-shielded pixel (D). It is possible to eliminate the dead area provided at both horizontal ends of the optical sensor unit and conventionally needed to provide the supply lines, and consequently the optical sensor unit (10) can be widened. Further it is possible to decrease the unimaged portion when such solid-state imaging devices are horizontally arrayed adjacently. According to the output signal from the light-shield pixel (D) or another pixel (A), a decrease in the amount of light inputted into the light-shielded pixel (D) can be corrected. Thus, a solid-state imaging device having a decreased dead area and comprising a wide optical sensor unit and a solid-state imaging device array comprising such solid-state imaging devices are realized.</p> |
