| 摘要 |
A process of making an electrical coupling stack is disclosed. A conductive structure is coupled to a substrate. The coupling includes a crystalline salicide first structure above the conductive structure, a nitrogen-containing amorphous salicide second structure above the crystalline salicide first structure, and a refractory metal third film above the nitrogen-containing amorphous salicide second structure. Processing includes depositing a refractory metal silicide first film over the conductive structure, depositing a refractory metal nitride second film over the refractory metal silicide first film, and depositing the refractory metal third film over the refractory metal nitride second film. Thermal processing is carried out to achieve the electrical coupling stack.
|
