发明名称 |
Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material |
摘要 |
A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.
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申请公布号 |
US2003224584(A1) |
申请公布日期 |
2003.12.04 |
申请号 |
US20030413812 |
申请日期 |
2003.04.15 |
申请人 |
HECHT THOMAS;BIRNER ALBERT;SEIDL HARALD;SCHRODER UWE;JAKSCHIK STEFAN;GUTSCHE MARTIN |
发明人 |
HECHT THOMAS;BIRNER ALBERT;SEIDL HARALD;SCHRODER UWE;JAKSCHIK STEFAN;GUTSCHE MARTIN |
分类号 |
C25D11/02;C25D11/32;H01L21/316;H01L21/8242;(IPC1-7):H01L21/326;H01L21/479;H01L21/31;H01L21/469 |
主分类号 |
C25D11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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