| 摘要 |
A method of optimizing a feature, defined by a wall (3806) in a wafer material (3800), to an accuracy of better than 1 micron involves treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material (3808) and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved. An alternative method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner, and plating the at least part of the wall with the material until a desired size for the feature is achieved. |
