ETCHING GAS AND METHOD FOR DRY ETCHING

摘要

The invention relates to an etching gas for producing a semiconductor component by means of a dry-etching method. Said etching gas comprises at least one part of CxFyHZ gas, especially C5F8, C4F6, C4F8 and/or C2F4H2, and is characterised by a molar hydrogen part which is larger than the molar part of the CxFyHZ gas. In this way, a high selectivity is achieved in relation to a resist layer (10).