MICROWAVE FIELD EFFECT TRANSISTOR STRUCTURE

摘要

A microwave transistor structure comprising: (a) a substrate (52) having a top surface; (b) a silicon semiconductor material (56) of a first conductivity type, having a first dopant concentration and a top surface; (c) a conductive gate (60) overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region (64, 66) of a second conductivity type; (e) a drain region (68) of the second conductivity type and having a drain dopant concentration greater than the channel region dopant concentration; (f) a body region (70) of the first conductivity type and having a body region dopant concentration; (g) a source region (74) of the second conductivity type and having a source region dopant concentration; (h) a shield plate region (78) formed on the top surface of the silicon semiconductor material; and (i) a conductive plug region (76) formed in the body region of the silicon semiconductor material.