| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a method for growing a GaN crystal so as to continuously maintain the crystal growth in the method for growing the GaN crystal using metal Ga vapor and a nitrogen plasma. <P>SOLUTION: In the method for growing the GaN crystal, comprising preparing a reaction tube 1 into which the nitrogen plasma is introduced from an upper part, providing a crucible 2 for evaporating metal Ga 12 at the bottom part of the reaction tube, arranging a substrate holding base 3 having a substrate holding surface, for holding a substrate 11 at the upper part of the crucible 2, mounting the substrate 11 for growing the GaN crystal on the substrate holding surface, and reacting the vapor of the metal Ga evaporated from the crucible with the nitrogen plasma 13a introduced from the upper part of the reaction tube on the substrate, openings 3d through which the vapor of the metal Ga is passed are not provided in the substrate holding surface and but provided at the side faces of the substrate holding base 3, and the vapor of the metal Ga is supplied onto the upper surface of the substrate 11 through a gap S between the substrate holding surface and the reaction tube. <P>COPYRIGHT: (C)2004,JPO |
