| 摘要 |
PURPOSE: A pattern forming method is provided to be capable of preventing pitting phenomenon generated due to the difference of etching speed between a high density pattern region and a low density pattern region by previously etching the partial portion of the high density pattern region. CONSTITUTION: After sequentially forming a gate isolating layer(104), a polysilicon layer(106), and a gate layer(108) at the upper portion of a substrate(102), the gate layer of a cell region(100) is selectively etched. Then, an etching process is carried out at the resultant structure for selectively patterning the gate layer, the polysilicon layer, and the gate isolating layer of the cell region and a peripheral region(200). Preferably, a hard mask(110) is used as an etching mask while carrying out the etching process. Preferably, a silicon nitride layer is used as the hard mask.
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