METHOD OF EVALUATING SAMPLE BY USING ELECTRON BEAM AND DEVICE MANUFACTURING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent the surface of a sample from being damaged by electron beam irradiation in a method of detecting defects on the sample surface by irradiating the sample such as a semiconductor device, etc., under a manufacturing process with the electron beam.

SOLUTION: A dose of the electron beam irradiating the sample surface is made 4μc/cm2or less. The dose is determined so as to prevent an oxide film, etc., on the sample surface from being damaged by the radiated electron beam. The dose is 2μc/cm2or less, or 1μc/cm2or less at need.

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