| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent parasitic capacitance from being formed across a control electrode of a transistor and a counter electrode placed opposite thereto. <P>SOLUTION: A source electrode 53 of a transistor Tr1 is extended up to the position of a gate electrode 51. With this structure, the part of the gate electrode 51 exposed to the counter electrode 14 is covered by the source electrode 53, therefore, the parasitic capacitance Ccom is prevented from being formed across the gate electrode 51 and the counter electrode 14. <P>COPYRIGHT: (C)2004,JPO |
