II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION,申请号EP19980944975-传众专利搜索

发明名称	II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION
摘要
申请公布号	EP0996985(B1)	申请公布日期	2003.12.03
申请号	EP19980944975	申请日期	1998.07.09
申请人	OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG	发明人	FISCHER, FRANK;WAAG, ANDREAS;BARON, THIERRY;LANDWEHR, GOTTFRIED;LITZ, THOMAS;REUSCHER, GUENTER;KEIM, MARKUS;ZEHNDER, ULRICH;STEINRUECK, HANS-PETER;NAGELSTRASSER, MARIO;LUGAUER, HANS-JUERGEN
分类号	H01L29/43;H01L21/28;H01L29/221;H01L33/00;H01L33/28;H01L33/40;H01S5/327;(IPC1-7):H01L33/00;H01L29/45	主分类号	H01L29/43
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