| 发明名称 |
Semiconductor device |
| 摘要 |
<p>A semiconductor device includes a semiconductor substrate, a pair of low breakdown voltage elements formed in the substrate so as to be adjacent to each other, and a high breakdown voltage element formed to be adjacent to one of the low breakdown voltage elements. The pair of low breakdown voltage elements are isolated from each other by a pn junction and the one of the low breakdown voltage elements and the high breakdown voltage element are isolated from each other by a dielectric material. The semiconductor substrate is a composite substrate formed by directly bonding a first substrate serving as an element region to a second substrate serving as a supporting member through an insulating film.</p> |
| 申请公布号 |
EP0721211(B1) |
申请公布日期 |
2003.12.03 |
| 申请号 |
EP19960104114 |
申请日期 |
1989.02.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAGAWA, AKIO;FURUKAWA, KAZUYOSHI;OGURA, TSUNEO |
| 分类号 |
H01L21/76;H01L21/761;H01L21/762;H01L21/763;H01L21/8222;H01L21/8234;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/739;H01L29/78;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
