| 摘要 |
PROBLEM TO BE SOLVED: To improve a method for growing a GaN crystal so as to continuously maintain the crystal growth in the method for growing the GaN crystal using metal Ga vapor and a nitrogen plasma. SOLUTION: In the method for growing the GaN crystal, comprising providing a reaction tube 1 into which the nitrogen plasma is introduced from an upper part, providing a crucible 2 for evaporating metal Ga 12 at the bottom part of the reaction tube, arranging a substrate holding base 3 for holding a substrate at the upper part of the crucible 2, mounting the substrate for growing the GaN crystal on the substrate holding base, and reacting the vapor of the metal Ga evaporated from the crucible with the nitrogen plasma 13a introduced from the upper part of the reaction tube on the substrate, when a GaN film is formed on the surface of a melt of the metal Ga in the crucible, or the melt of the metal Ga is consumed completely, the melt 14d of Ga is additionally supplied into the crucible from the outside of the reaction tube. COPYRIGHT: (C)2004,JPO
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