| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin for a chemically amplified photoresist composition. <P>SOLUTION: The polymer has a structure of a unit (II) represented by the chemical formula 166 (wherein R<SP>1</SP>is H or a 1-4C alkyl group; R<SP>2</SP>is a hydroxy group, a 1-8C alkoxy group or a 1-8C thioalkyl group; G is (CH<SB>2</SB>)<SB>n</SB>, O, or S; n is an integer of 0-4; Rc is a lactone group; and m is an integer of 1-3). The polymer exhibits excellent characteristics such as hydrophilicity and dry etching resistance, and is used for manufacturing a chemically amplified photoresist composition. The chemically amplified photoresist composition is used in a lithography process, particularly in a lithography process using a light source of a wavelength of 193 nm and is quite excellent in resolution, profiles and photosensitivity. <P>COPYRIGHT: (C)2004,JPO |
