| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize an alloy essentially comprising Cu (Cu alloy) with an improved adhesion to a glass substrate or a silicon film, and to provide a wiring material using this alloy. <P>SOLUTION: The Cu alloy comprising 80-99.5 wt.% Cu and 0.5-20 wt.% total of Au and/or Co is used as the wiring material. A film formed on the glass substrate or a silicon wafer using the wiring material through sputtering process shows a sufficiently low electric resistance and a strong adhesion strength to the substrate. <P>COPYRIGHT: (C)2004,JPO</p> |
