发明名称 |
Passivation structure for flash memory and method for fabricating same |
摘要 |
A passivation structure for a semiconductor device includes a high ultraviolet transmittance silicon nitride (UV-SiN) layer. This UV-SiN layer substantially conformally overlies a plurality of top metal lines, which are formed over a semiconductor substrate, such that topographical hollows are defined between adjacent top metal lines. A spin-on glass (SOG) material fills in the topographical hollows. A silicon oxynitride (SiON) layer having a thickness in a range from about 8,000 angstroms to about 10,000 angstroms overlies the UV-SiN layer and the SOG material. A method for forming the passivation structure also is described.
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申请公布号 |
US6656778(B1) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020133142 |
申请日期 |
2002.04.26 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN JUNG-CHIEH;LEE TUNG-TA;CHEN I-YUEH;LU CHEN-CHIEN |
分类号 |
H01L21/314;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/314 |
代理机构 |
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地址 |
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