发明名称 Power-switching semiconductor device
摘要 In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are formed on a front major surface of a semiconductor substrate, and a second electrode is formed on a rear major surface thereof, and a turn-on operation is performed between the first main electrode and the second main electrode with a control signal inputted from the control electrode, specifying a relationship between a width of a segment and a distance between adjacent segments, and others.
申请公布号 US6657239(B1) 申请公布日期 2003.12.02
申请号 US20010784451 申请日期 2001.02.27
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MORISHITA KAZUHIRO;SATOH KATSUMI
分类号 H01L29/417;H01L29/423;(IPC1-7):H01L29/45 主分类号 H01L29/417
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