| 摘要 |
A method for fabricating a capacitor that prevents etching solution from attacking an inter-layer deposition layer in wet-etching an oxide which supports bottom electrodes. The method includes: forming a first etching barrier layer, a second etching barrier layer, and a sacrificial layer on a inter-layer deposition layer and a storage node contact; forming a concave pattern exposing the storage node contact by etching the sacrificial layer, the second etching barrier layer and the first etching barrier layer sequentially; forming a third etching barrier layer on a inner wall of the concave pattern; forming bottom electrode connected to the storage node contact in the concave pattern; removing the sacrificial layer; removing the second etching barrier layer and the third etching barrier layer selectively, and forming an anti-oxidation layer pattern by leaving the third etching barrier layer between the first etching barrier layer and the bottom electrode; and forming a dielectric layer and a top electrode on the bottom electrode sequentially.
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