发明名称 Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor
摘要 A detector and a camera system for electromagnetic radiation being integrated in a solid state substrate are disclosed. Said substrate comprises a first region of a first conductivity and a second region of a second conductivity, said first region being adjacent to said second region, and said first and second region forming a detection junction, at least part of said junction being substantially orthogonal with respect to the plane of the surface of the substrate above said detection junction. The camera system comprises a configuration of pixels in an imaging sensor being integrated in a solid state substrate, essentially each of the pixels comprising a region of a first conductivity type being at least partly surrounded by a region of a second conductivity type, thereby forming a junction region, and wherein the region of the first conductivity type includes at least one contact area. The camera system further comprises means for collecting charge carriers being generated by the radiation impinging on said substrate at least in said region of said first conductivity type and in said junction region, in said contact area.
申请公布号 US6656760(B2) 申请公布日期 2003.12.02
申请号 US20010803336 申请日期 2001.03.09
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 SCHMITZ JURRIAAN;ROKS EDWIN;VERBUGT DANIEL WILHELMUS ELISABETH
分类号 H01L27/146;H01L31/10;H04N5/335;(IPC1-7):H01L21/00;H01L29/82;H01L43/00 主分类号 H01L27/146
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