发明名称 Semiconductor device with low power consumption memory circuit
摘要 The present invention relates to a system LSI consolidating a logic circuit and an SRAM circuit. More specifically, the present invention relates to a semiconductor device which can reduce a leakage current and the power consumption in the standby state.The logic circuit in the system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing a leakage current. At the same time, the SRAM circuit controls a substrate bias to reduce the leakage current.
申请公布号 US6657911(B2) 申请公布日期 2003.12.02
申请号 US20020274985 申请日期 2002.10.22
申请人 发明人
分类号 G11C11/41;G11C5/14;G11C11/34;G11C11/413;G11C11/417;G11C11/418;H01L29/94;(IPC1-7):G11C7/00 主分类号 G11C11/41
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