发明名称 |
Method for the selective removal of high-k dielectrics |
摘要 |
One aspect of the invention relates to a method of etching a high-k dielectric. The method involves removing an exposed portion of a high-k dielectric layer from a substrate by wet etching with a solution comprising water, a strong acid, an oxidizing agent, and a fluorine compound. The etching solution provides selectivity towards the high-k film against insulating materials and polysilicon and is therefore useful in manufacturing FETs.
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申请公布号 |
US6656852(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20010006081 |
申请日期 |
2001.12.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO LUIS PACHECO;CHAMBERS JAMES JOSEPH |
分类号 |
H01L21/28;H01L21/311;H01L29/51;(IPC1-7):H01L21/302;H01L21/336;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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