发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device enables the formation of a well optimized for a fine MOS transistor and a well formed deep with a relatively low concentration for a high voltage MOS transistor without increasing the number of manufacturing steps. The method for manufacturing a semiconductor device includes the steps of: forming a first ion implantation expendable film and an etching mask film on a first conductive type semiconductor substrate; patterning the etching mask film into a shape of an active and field region; introducing dopant into the substrate; forming a trench groove on the substrate; forming an insulation film in the trench groove; forming a first well; flattening the insulation film; removing the etching mask film; removing the expendable film; forming a second ion implantation expendable film on the substrate; forming a mask pattern; and forming a second well by introducing dopant into the substrate.
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申请公布号 |
US6656816(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020142700 |
申请日期 |
2002.05.10 |
申请人 |
UMC JAPAN |
发明人 |
TOMIOKA YUGO |
分类号 |
H01L21/76;H01L21/761;H01L21/762;H01L21/8234;H01L21/8238;H01L27/08;H01L27/092;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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