发明名称 |
METHOD OF REDUCING SILICON OXYNITRIDE GATE INSULATOR THICKNESS IN SOME TRANSISTORS OF A HYBRID INTEGRATED CIRCUIT TO OBTAIN INCREASED DIFFERENTIAL IN GATE INSULATOR THICKNESS WITH OTHER TRANSISTORS OF THE HYBRID CIRCUIT |
摘要 |
A relatively thin gate insulator of a digital switching transistor is formed from a layer of silicon oxynitride which was initially formed by implanting nitrogen atoms in a silicon substrate and oxidizing the nitrogen and silicon. It has been discovered that an outer layer of silicon dioxide is formed as a part of the silicon oxynitride layer. Removing this outer layer of silicon dioxide from the silicon oxynitride layer leaves a thin remaining layer of substantially-only silicon oxynitride as the gate insulator. Thinner gate insulators of approximately 15-21 angstroms, for example, can be formed from a grown thickness of 60 angstroms, for example. Gate insulators for digital and analog transistors may be formed simultaneously with a greater differential in thickness been possible by using conventional nitrogen implantation techniques.
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申请公布号 |
US6656805(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020304631 |
申请日期 |
2002.11.26 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
KAMATH ARVIND;PATEL RAJIV;KAPRE RAVINDRA M. |
分类号 |
H01L21/8234;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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