Method of forming a protected crown capacitor structure utilizing the outside crown surface to increase capacitance

摘要

A method of forming a DRAM capacitor structure featuring increased surface area, has been developed. The method features a polysilicon top plate structure located overlying an array comprised of individual polysilicon storage node structures. Each polysilicon storage node structure is comprised with tall, vertical features, and additional surface area is obtained via removal of butted insulator layer from a first group of surfaces of the storage node structures. Insulator layer remains butted to a second group of storage node structure surfaces to prevent collapse of the tall, vertical features of the storage node structures during subsequent processing sequences.