发明名称 |
Magnetic memory device |
摘要 |
A magnetic memory device has a plurality of write lines and a plurality of memory cells. Each of the plurality of memory cells are operatively positioned between a corresponding pair of the plurality of write lines. Each of the plurality of memory cells has a sense layer and a reference layer separated by an insulating layer. The reference layer of each of the plurality of memory cells includes a high coercivity permanent magnet.
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申请公布号 |
US6657890(B1) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020176715 |
申请日期 |
2002.06.21 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
BLOOMQUIST DARREL R. |
分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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