| 摘要 |
Device for forming a single crystal of a non-congruent evaporation compound body (e.g. silicon carbide), which is able to exist in mono- or poly-crystalline form, comprises: a substrate (42) between two superposed cylindrical compartments (20, 14); a single crystal seed (46) at the top of the first compartment, gas precursor inlet (36); and an inductive heater (26). Device for the formation of a single crystal of a non-congruent evaporation compound body (namely, silicon carbide) able to exist in monocrystalline or polycrystalline form comprises: a first compartment (20) containing a substrate (42) in which is formed a polycrystalline source of the body and a single crystal seed (46) of the body; a second compartment (14), the substrate being located between the two compartments; an inlet (36) for gas precursors in the second compartment to cause deposition of the body in polycrystalline form on the substrate; and a heater (26) to maintain the substrate at a temperature above the temperature of the seed to cause sublimation of the polycrystalline source and deposition of the body in a single crystal form on the seed. An Independent claim is given for a process for forming a single crystal of a non-congruent evaporation compound body able to exist in monocrystalline or polycrystalline form. |
