发明名称 Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them
摘要 A semiconductor integrated circuit device, responsive to an input signal having a low amplitude and short transition time, operates with low power consumption and prevents the flow of breakthrough current. In an example circuit thereof, the input signal is transmitted through an NMOS pass transistor to the gate of a first NMOS transistor and is applied, through a second NMOS transistor, to the gate of a first PMOS transistor, the first PMOS transistor performing complementary operation with the first NMOS transistor through the second NMOS transistor; the gate of the first PMOS transistor is connected to the power supply potential through the second PMOS transistor; the gate of the second NMOS transistor is connected to the power supply potential; and the gate of the second PMOS transistor is controlled by the signal at a common drain connection of the first NMOS and first PMOS transistors.
申请公布号 US6657459(B2) 申请公布日期 2003.12.02
申请号 US20020143762 申请日期 2002.05.14
申请人 HITACHI, LTD.;HITACHI ENGINEERING CO., LTD. 发明人 NISHIO YOJI;HIROSE KOSAKU;HARA HIDEO;KOIKE KATSUNORI;NEMOTO KAYOKO;YAMAUCHI TATSUMI;MURABAYASHI FUMIO;YAMADA HIROMICHI
分类号 G11C11/41;H03K3/3565;H03K19/0185;(IPC1-7):H03K19/096 主分类号 G11C11/41
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