发明名称 |
Monolithically integrated electronic device and fabrication process therefor |
摘要 |
An electronic device, integrated monolithically in a semiconductor substrate and comprising a bipolar transistor connected in series to at least one MOS transistor, the bipolar transistor having a base region that includes a first buried region and a first diffused region extending continuously from the substrate surface down to the buried region, and the diffused region is bordered by an isolation trench region extending in the buried region.
|
申请公布号 |
US6657262(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20010823915 |
申请日期 |
2001.03.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PATTI DAVIDE |
分类号 |
H01L27/07;(IPC1-7):H01L29/76;H01L21/823;H01L27/082;H01L27/102;H01L29/00;H01L29/94;H01L31/113;H01L31/119;H01L31/002 |
主分类号 |
H01L27/07 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|