Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells

摘要

A virtual ground nonvolatile memory cell array is formed by a plurality of adjacent nonvolatile memory cells arranged in rows and columns so as to form an array. Each of the nonvolatile memory cells is formed by an N channel MOSFET with a trapping layer formed between two isolating layers. In the erase state, the trapping layer stores an amount of electrons. A method for programming the virtual ground nonvolatile memory cell array is also disclosed. The potentials applied to the bitlines and wordlines in the array are preset to program nonvolatile memory cells and not to disturb cells adjacent to the nonvolatile memory cell to be programmed.