Method to enhance operating characteristics of FET, IGBT, and MCT structures

摘要

Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of the structure without requiring counter doping of the channel. The doping level of the emitter region of an MCT is kept high everywhere except in the channel in order to provide a fast turn-off time for the MCT.