| 摘要 |
The present invention relates to a capacitor structure suitable for semiconductor devices and a method for manufacturing such capacitors for highly-integrated memory devices using a TaON dielectric layer having a high dielectric constant. The capacitor is produced on a semiconductor substrate by forming an insulating interlayer on the substrate, forming a contact hole through the insulating interlayer, forming a contact plug in the contact hole, forming a lower electrode with MPS that is electrically connected to the contact plug, doping the lower electrode, forming a TaON dielectric layer on the lower electrode, annealing the TaON dielectric layer, and forming an upper electrode layer on the TaON dielectric layer.
|
