发明名称 |
Diverse band gap energy level semiconductor device |
摘要 |
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
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申请公布号 |
US6657278(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020254129 |
申请日期 |
2002.09.25 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
LEE THOMAS H. |
分类号 |
G11C11/36;H01L23/525;H01L27/10;H01L29/165;H01L29/205;H01L29/267;H01L29/861;(IPC1-7):H01L29/00 |
主分类号 |
G11C11/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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