Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties

摘要

A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma treated prior to forming therein the patterned conductor layer with at least one of: (1) an argon containing plasma with each of a radio frequency source power density and a radio frequency bias power density of less than about 300 watts; and (2) a hydrogen containing plasma with a radio frequency source power of greater than about 400 watts and a radio frequency bias power density of greater than about 100 watts.