| 发明名称 |
Method for reduced capacitance interconnect system using gaseous implants into the ILD |
| 摘要 |
A method of decreasing the dielectric constant of a dielectric layer. First, a dielectric layer is formed on a first conductive layer. A substance is then implanted into the dielectric layer.
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| 申请公布号 |
US6656822(B2) |
申请公布日期 |
2003.12.02 |
| 申请号 |
US19990344918 |
申请日期 |
1999.06.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;ROBERDS BRIAN;LEE SANDY S.;VU QUAT |
| 分类号 |
H01L21/3115;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/265;H01L21/336 |
主分类号 |
H01L21/3115 |
| 代理机构 |
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代理人 |
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| 主权项 |
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