发明名称 |
Defect reduction in GaN and related materials |
摘要 |
A material with reduced surface defects includes a defect filter layer on an underlying material. The defect filter reduces dislocations and defects present in an underlying material. The defect filter include islands of one material formed on the underlying material and a continuous layer of a second material over the islands. The pair of layers is repeated a plurality of times to reduce the number of defects emanating from the underlying material.
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申请公布号 |
US6657232(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20010834763 |
申请日期 |
2001.04.16 |
申请人 |
VIRGINIA COMMONWEALTH UNIVERSITY |
发明人 |
MORKOC HADIS |
分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L33/00;(IPC1-7):H01L29/15;H01L31/025 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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