发明名称 Defect reduction in GaN and related materials
摘要 A material with reduced surface defects includes a defect filter layer on an underlying material. The defect filter reduces dislocations and defects present in an underlying material. The defect filter include islands of one material formed on the underlying material and a continuous layer of a second material over the islands. The pair of layers is repeated a plurality of times to reduce the number of defects emanating from the underlying material.
申请公布号 US6657232(B2) 申请公布日期 2003.12.02
申请号 US20010834763 申请日期 2001.04.16
申请人 VIRGINIA COMMONWEALTH UNIVERSITY 发明人 MORKOC HADIS
分类号 C30B25/02;C30B25/18;H01L21/20;H01L33/00;(IPC1-7):H01L29/15;H01L31/025 主分类号 C30B25/02
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