Dual damascene with silicon carbide middle etch stop layer/ARC

摘要

The dimensional accuracy of trench formation and, hence, metal line width, in damascene processing is improved by employing a silicon carbide middle etch stop layer/ARC. Embodiments include via first-trench last dual damascene techniques employing a silicon carbide middle etch stop layer/ARC having an extinction coefficient (k) of about -0.10 to about -0.60.